Strained Active Regions in GaAs-based Quantum Cascade Lasers

摘要

This paper explores the effects of low indium concentration in deep-well AlGaAs/GaAs quantum cascade laser structures. Photon emission from these strained active regions involves nonlinear optical processes, which reduce the emission wavelength. Designs that incorporate strain in one and two wells of the active region, respectively, on (111) GaAs are compared. Results demonstrate wavelength extendibility in compressively strained deep-well GaAs-based devices.