AlGaInAs/InP Monolithically Integrated DFB Laser Array

摘要

The monolithic integration of four 1.50-$mu{rm m}$ range AlGaInAs/InP distributed feed-back lasers with a 4$,times,$1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies—sidewall grating and quantum well intermixing—has been demonstrated. The four channels span the wavelength range of 1530–1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as $21.2^{circ}times 25.1^{circ}$, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.