• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Semiconductor lasers and applications V >InGaAsP/InP DFB laser array monolithically integrated with MMI combiner and SOA
【24h】

InGaAsP/InP DFB laser array monolithically integrated with MMI combiner and SOA

机译：与MMI组合器和SOA单片集成的InGaAsP / InP DFB激光阵列

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The monolithic integrated of four channel 1.55- μm range InGaAsP/InP distributed feedback lasers with a 4×1 multimode interference (MMI) optical combiner and semiconductor optical amplifier (SOA) using varied width ridge method, butt-joint technique and holographic exposure is proposed and demonstrated. The average output power and the threshold current are 1.8mW and 35mA, respectively, when the injection current of SOA is 100mA, with over 40-dB side mode suppression ratio (SMSR). The lasing wavelength is 1.55-μm range and 40dB sidemode suppression ratio (SMSR) is obtained. The four channels can operated separately or simultaneously.
机译：提出了采用可变宽度脊法，对接技术和全息曝光的四通道1.55μm范围InGaAsP / InP分布式反馈激光器与4×1多模干涉（MMI）光学组合器和半导体光放大器（SOA）的单片集成并演示了。当SOA的注入电流为100mA时，平均输出功率和阈值电流分别为1.8mW和35mA，具有超过40dB的副模抑制比（SMSR）。激光波长为1.55μm范围，并获得40dB的副模抑制比（SMSR）。四个通道可以分别或同时操作。

著录项

  • 来源
    《Semiconductor lasers and applications V》|2012年|85520F.1-85520F.6|共6页
  • 会议地点 Beijing(CN)
  • 作者

    Li Ma; Hongliang Zhu; Minghua Chen; Can Zhang; Baojun Wang;

  • 作者单位

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Science, P. O. Box 912, Beijing 100083, P. R. China,Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Science, P. O. Box 912, Beijing 100083, P. R. China;

    Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Science, P. O. Box 912, Beijing 100083, P. R. China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Science, P. O. Box 912, Beijing 100083, P. R. China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    DFB laser array; butt-joint technique; monolithically integrated device; multimode interference coupler;

    机译：DFB激光阵列；对接技术单片集成器件；多模干扰耦合器;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号