Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays

Gustavsson M.; Lagerstrom B.

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Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays

机译：单片集成4 * 4 InGaAsP / InP激光放大器栅极开关阵列

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摘要

Monolithically integrated 4*4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.

机译：已经制造并评估了包括24个集成激光放大器的单片集成4 * 4半导体激光放大器栅极开关阵列。报告了纤维之间的净正光学增益，高消光比和低串扰。

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来源
《Electronics Letters》 |1992年第24期|P.2223-2225|共3页
作者
Gustavsson M.; Lagerstrom B.;
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作者单位

Ericsson Telecom AB, Stockholm, Sweden;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; crosstalk; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical switches; semiconductor laser arrays; semiconductor switches; InGaAsP-InP laser amplifier gate switch arrays; extinction ratio; fibre to fibre switch characteristics; low crosstalk; monolithic integration; positive optical gain;

机译：III-V半导体;串扰;砷化镓;镓化合物;铟化合物;集成光学;光通信设备;光开关;半导体激光器阵列;半导体开关;InGaAsP-InP激光放大器门开关阵列;消光比;光纤到光纤的开关特性低串扰单片集成正光增益;

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专利

1. Monolithically integrated 2*2 InGaAsP/InP laser amplifier gate switch arrays [J] . Janson M., Lundgren L. Electronics Letters . 1992,第8期

机译：单片集成2 * 2 InGaAsP / InP激光放大器栅极开关阵列
2. Digital transmission experiment with monolithic 4*4 InGaAsP/InP laser amplifier gate switch array [J] . Gustavsson M., Janson M. Electronics Letters . 1993,第12期

机译：单片4 * 4 InGaAsP / InP激光放大器栅极开关阵列的数字传输实验
3. Monolithically Integrated 4x4 InGaAsP/InP Laser Amplifier Gate Switch Matrix Based on Buried Ridge Stripe Waveguides [J] . Jung-Ho SONG, Hyun-Soo KIM, Eun Deok SHIM, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1AaB期

机译：基于埋脊条纹波导的单片集成4x4 InGaAsP / InP激光放大器栅极开关矩阵
4. Monolithically integrated 2/spl times/2 InGaAsP/InP laser amplifier gate switch arrays using RIE and MOVPE [C] . Kwang Ryong Oh, Joo Meon Ahn . 1995

机译：使用RIE和MOVPE单片集成2 / spl次/ 2 InGaAsP / InP激光放大器栅极开关阵列
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. An InP-based vortex beam emitter with monolithically integrated laser [O] . Juan Zhang, Changzheng Sun, Bing Xiong, -1

机译：具有单片集成激光器的基于InP的涡旋光束发射器
7. Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration [O] . Koren U., Hasson A., Yu K. L., 1982

机译：具有微裂镜的低阈值InGaAsP / InP激光器，适合单片集成
8. Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator [R] . Wu, C., Keo, S., Yao, S., 1998

机译：采用相同层方法的单片集成InGaasp / Inp激光器/调制器，用于光电子振荡器

Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays

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