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Electric field effects in AlGaAs-GaAs symmetric and asymmetric coupled quantum wells

机译:AlGaAs-GaAs对称和不对称耦合量子阱中的电场效应

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摘要

A theoretical study of energy level shift and field-induced tunneling in symmetric and asymmetric coupled quantum wells is presented. Energy level shift is calculated from the time-dependent Schrodinger equation using the inverse power method. The time evolution of an electron wavepackage is shown by the application of the time-development operator of the time-independent Schrodinger equation. Energy level shift in coupled quantum wells is found to be enhanced in comparison to single quantum wells. The energy level shift in coupled quantum wells is found to be nearly linear with the applied field. Oscillation frequencies for electrons in symmetric and asymmetric coupled quantum wells are evaluated versus the applied field and compared to semiclassical prediction. Tunneling lifetimes in symmetric and asymmetric coupled quantum wells are evaluated versus the applied field.
机译:提出了对称和非对称耦合量子阱中能级位移和场致隧穿的理论研究。使用逆功率方法根据时间相关的薛定inger方程计算能级位移。电子波包的时间演化通过与时间无关的薛定inger方程的时间展开算子的应用来显示。发现与单量子阱相比,耦合量子阱中的能级移位得到增强。发现耦合量子阱中的能级位移与所施加的场几乎成线性关系。相对于所施加的场,评估了对称和非对称耦合量子阱中电子的振荡频率,并与半经典预测进行了比较。相对于所施加的场,评估了对称和非对称耦合量子阱中的隧穿寿命。

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