Thermal properties of etched-well surface-emitting semiconductor lasers

摘要

A comprehensive two-dimensional model for analysis of thermal effects in etched-well vertical-cavity surface-emitting lasers is presented. A self-consistent solution for the electrical and thermal processes is obtained numerically. Joule heating is shown to play a key role in thermal behavior of these devices. Substantial mismatch between current density and optical field profiles can be remedied by proper doping of top cladding layer. A simple way to control the sign and strength of thermal waveguiding is suggested. Consequences for large-scale two-dimensional integration are indicated.