Lateral npn junction and semi-insulating GaAs current confinement structure for index-guided InGaAs/AlGaAs lasers by molecular beam epitaxy

摘要

A current confinement structure with a lateral npn junction and a semi-insulating (SI) GaAs is examined for an index-guided InGaAs/AlGaAs strained quantum-well laser. Amphoteric doping of Si in GaAs and AlGaAs is used to form a lateral npn structure grown over a channeled patterned low-temperature-grown SI GaAs layer. A threshold current of 7.4 mA and total external differential quantum efficiency of 59% under room-temperature continuous-wave (CW) operation are achieved with devices fabricated by a self-aligned process. A device with antireflection-high-reflection (AR-HR) coating had a light output over 300 mW.