30/spl deg/C CW operation of 1.52 /spl mu/m InGaAsP/AlGaAs vertical cavity lasers with in situ built-in lateral current confinement by localised fusion

摘要

1.52 /spl mu/m double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in situ built-in lateral current confinement were fabricated using a localised wafer fusion process. A threshold current of 2.5 mA at 4 V was obtained for devices with a 10/spl times/10 /spl mu/m/sup 2/ current aperture. These devices operate CW up to 30/spl deg/C. The width of the dominant mode is less than 0.1 nm and the sidemode suppression ratio is 30 dB.