Field-enhanced nonequilibrium C/V and I/V characteristics of MOScapacitor under linear voltage ramp bias

摘要

A theoretical method is presented to analytically describennonequilibrium C/V and I/V characteristics of an MOS capacitor undernlinear voltage ramp bias. Unlike previous theories the carrier emissionnprobability is assumed to be field-dependent and therefore thentransients are known as field enhanced. The one-dimensionalnPoole-Frenkel model is used to describe the carrier-emission probabilityndependent on the applied electric field. It has been verified that thisnmodel is available for coulombic centres. A differential equation isnestablished to describe the change of the space-charge region width withntime. The MOS capacitance and gate current are related to thenspace-charge region width. In this way the field enhanced nonequilibriumnC/V and I/V characteristics are obtained