In-Situ Measurement of Total Dose Radiation Effects on Parallel Plate MOSCapacitors Using the NPS Linear Accelerator

摘要

This research examines radiation effects of part of a Metal Oxide Semiconductor(MOS) operational amplifier and is applicable to Complimentary MOS (CMOS) technology as well. More specifically, it is pertinent to MOS capacitors used to internally compensate op amps. First, a review of semiconductor theory is presented followed by a discussion of damage mechanisms to MOS capacitors and a brief look at operational amplifier fundamentals. Using the Naval Postgraduate School linear accelerator, these capacitors were irradiated with pulsed electrons possessing energies of up to 26 MeV for varying times. In-situ measurements were taken to immediately determine the capacitance value via the measured filter break frequency as a function of fluence. Separate irradiation runs were performed on three MOSIS capacitors and were terminated upon filter failure. This research concludes with a hypothesis of the filter fallure mechanism and suggested areas for expansion of continuing research efforts.