Degradation of the characteristics of p+ poly MOScapacitors with NO nitrided gate oxide due to post nitrogen annealing

摘要

Summary form only given. Wet oxides annealed in NO ambient for twodifferent temperatures and degradation due to post N₂annealing on the characteristics of p+ poly MOS capacitorshave been investigated. Results show that samples with N₂post annealing at 900° C have a large increase in leakage current andcharge trapping compared with samples without N₂ postannealing. Although NO annealing improves the SiO₂-Siinterface, post annealing in N₂ at a high temperature of900° C for 30 minutes may diffuse boron from the p+ polyto the gate oxide, and hence degrades the characteristics of p+ poly Si gate oxide