Novel velocity-electric field relation for modelling of compoundsemiconductor field-effect transistors

摘要

A novel empirical relation is proposed for thenvelocity-electric-field profile of compound semiconductors. Thenvelocity-field curve in compound semiconductors (e.g. GaAs, InP etc.)nhas a peak which is followed by a negative-differential-resistancenregion in which the velocity decreases continuously with increase in thenelectric field. The proposed empirical fit is a two-piece nonlinearnapproximation, the first part being a third-order polynomial and thensecond part being an exponential relation to ensure the continuity andnsmoothness over the entire region. The accuracy of the model isnconfirmed by comparing and contrasting the proposed empirical curve withnthe available experimental and simulated results. The proposed model isnexpected to find useful application in analytical modelling ofnfield-effect transistors