Semi-numerical static model for nonplanar-drift lateral DMOStransistor

摘要

A semi-numerical static model for a nonplanar-drift lateralndouble-diffused MOS transistor (ND-LDMOST) is described. The modellingnmethodology is based on a regional approach, and its implicit equationsnare solved numerically. With the support of MEDICI simulations, ansimplified quasi-two-dimensional analysis is used to characterise thennonplanar-drift region. The complete model is composite and accounts fornLDMOST characteristics such as the doping-graded channel, thennonplanar-drift structure, and the space-charge-limited current flow innthe drift region. The model equations are continuous on all operatingnbias conditions, which is especially important for convergence in thencircuit simulator. The model predictions are in satisfactory agreementnwith experimental measurements. This ND-LDMOST model is suitable fornincorporation into a SPICE-like circuit simulator