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首页> 外文期刊>IEE proceedings. Part G, Circuits, devices and systems >LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model andits application to power IC TCAD
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LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model andits application to power IC TCAD

机译:LADISPICE-1.2:非平面漂移横向DMOS晶体管模型及其在为IC TCAD供电中的应用

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摘要

A circuit simulation program (LADISPICE: LAteral Dmos transistornSPICE) has been developed for simulation and optimisation of power ICsnwhich combine high-power lateral double-diffused MOS transistors withnlow-voltage logic and control elements on the same chip. This is andevelopment of a previous static model and involves a charge-basedndynamic model and a parasitic bipolar junction transistor model. Thesenmodels have been incorporated into SPICE2G.6 source code and the paperndemonstrates the excellent results. This new software represents anneffective TCAD tool for the design and simulation of LDMOST power ICs
机译:已经开发了电路仿真程序(LADISPICE:LAteral Dmos transistornSPICE)来仿真和优化功率IC,该电路将高功率横向双扩散MOS晶体管与低电压逻辑和控制元件集成在同一芯片上。这是先前静态模型的发展,涉及基于电荷的动态模型和寄生双极结型晶体管模型。 Thesenmodels已被合并到SPICE2G.6源代码中,并证明了出色的结果。该新软件代表了用于设计和仿真LDMOST电源IC的高效TCAD工具

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