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首页> 外文期刊>IEE proceedings. Part G >LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model and its application to power IC TCAD
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LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model and its application to power IC TCAD

机译:LADISPICE-1.2:非平面漂移横向DMOS晶体管模型及其在为IC TCAD供电中的应用

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摘要

A circuit simulation program (LADISPICE: LAteral Dmos transistor SPICE) has been developed for simulation and optimisation of power ICs which combine high-power lateral double-diffused MOS transistors with low-voltage logic and control elements on the same chip. This is a development of a previous static model and involves a charge-based dynamic model and a parasitic bipolar junction transistor model. These models have been incorporated into SPICE2G.6 source code and the paper demonstrates the excellent results. This new software represents an effective TCAD tool for the design and simulation of LDMOST power ICs.
机译:已经开发了电路仿真程序(LADISPICE:LAteral Dmos晶体管SPICE),用于仿真和优化功率IC,该功率IC在同一芯片上结合了高功率横向双扩散MOS晶体管与低压逻辑和控制元件。这是先前静态模型的发展,涉及基于电荷的动态模型和寄生双极结晶体管模型。这些模型已合并到SPICE2G.6源代码中,并证明了出色的结果。该新软件代表了用于LDMOST电源IC设计和仿真的有效TCAD工具。

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