Monte Carlo Analysis of Transistor Diffusion Techniques [Letter to the Editor]

摘要

This note concerns an analytical approach to the problem of base-width reproducibility in the construction of double-diffused transistors. Current gain, being dependent upon base width, is frequently distributed over a wide range of magnitudes for devices intended to be identical. Lack of adequate control in the diffusion process is suggested as a contributing factor in this problem. To investigate the influence of diffusion tolerances, Monte Carlo methods of statistical analysis are applied to an elementary equation characterizing the impurity distribution within a transistor.