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首页> 外文期刊>IEEE Transactions on Components, Hybrids, and Manufacturing Technology >Advanced ceramic substrates for multichip modules with multilevel thin film interconnects
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Advanced ceramic substrates for multichip modules with multilevel thin film interconnects

机译:用于具有多层薄膜互连的多芯片模块的高级陶瓷基板

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摘要

Two ceramic materials systems, cofired 99.6% alumina/tungsten and aluminum nitride, are presented as options for use as multichip modules bases. The 99.6% alumina system addresses the limitations of conventional 90-94% alumina systems by providing +or-0.2% dimensional control combined with a smooth, defect-free surface. The 99.6% alumina/tungsten system exhibits an enhanced flexural strength. The injection-molded aluminum nitride produced using the binderless injection molding process is characterized by an average thermal conductivity of 230 W/mK with a standard deviation of 7.3. The controlled microstructure of the AlN material results in a smooth, defect-free surface after lapping and polishing for thin film compatibility. Precise dimensional tolerance control of +or-0.2% for substrate features such as cavities or through holes is provided.
机译:介绍了两种陶瓷材料系统,共烧99.6%的氧化铝/钨和氮化铝,作为多芯片模块基座的选件。 99.6%的氧化铝系统通过提供+或-0.2%的尺寸控制以及光滑,无缺陷的表面来解决传统90-94%氧化铝系统的局限性。 99.6%的氧化铝/钨系统具有增强的抗弯强度。使用无粘结剂注塑工艺生产的注塑氮化铝的特征在于平均导热系数为230 W / mK,标准偏差为7.3。 AlN材料的可控微观结构在研磨和抛光后可形成光滑,无缺陷的表面,以实现薄膜兼容性。对于基板特征(例如空腔或通孔),提供了精确的尺寸公差控制,为+或-0.2%。

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