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Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems

机译:用于检测多层互连系统中快速温度循环和电迁移引起的薄膜开裂的测试芯片

摘要

Temperature cycling in power ICs is a reliability hazard, even more so when electromigration is playing a role as well. The frequency of the temperature cycling is in the audio domain, which makes it impossible to test in environmental chambers. In the paper, the design and application of a novel test chip to study fast temperature cycling, electromigration and their interaction in multilevel interconnection systems is reported. Incorporated into the test chip are a heating element, a temperature sensor, and extrusion monitors. Simulation was used to study the initial stress distributions after processing and local temperature distributions in the test chip during the temperature transient. First experimental results have been obtained in the area of fast temperature cycling experiments (by using internal heating only) and electromigration experiments. Failure distributions and failure modes are discussed. Results indicate that on-chip cycling is a powerful tool to study reliability of power ICs under realistic conditions.
机译:功率IC中的温度循环是可靠性的隐患,在电迁移也起作用的情况下更是如此。温度循环的频率在音频范围内,因此无法在环境室内进行测试。在本文中,报道了一种新型测试芯片的设计和应用,以研究快速温度循环,电迁移及其在多层互连系统中的相互作用。集成到测试芯片中的是加热元件,温度传感器和挤压监测器。通过仿真研究了处理后的初始应力分布以及温度瞬变期间测试芯片中的局部温度分布。在快速温度循环实验(仅通过内部加热)和电迁移实验领域获得了第一批实验结果。讨论了故障分布和故障模式。结果表明,片上循环是研究现实条件下功率IC可靠性的强大工具。

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