Photo--reflectance study on Ga(As,P) fractal-structured lattice

摘要

Subband formation in fractal-structured lattice (FSL) has been investigated by photo-reflectance (PR) measurements. Ga(As,P) FSL was grown on a (001 ) GaAs substrate by atomic layer epitaxy (ALE). Fibonacci progression for the 11th generation was used as the fractal arrangement of lattice. The X-ray diffraction shows no periodicity but long-range order. The PR spectra show formation of the singular subband originating from the fractal lattice arrangement, and are consistent with a transfer matrix calculation on the FSL. These results suggest that the FSL arrangement can cause interference of electron wave function in the FSL.