Modelling of vacuum-silicon solid microwave diodes and triodes based on P~++ -N and on tungsten cathodes

摘要

This work reports the analysis of vacuum--solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in the millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small multiplication losses. Additionally, the analysis of the basic parameters of these vacuum--solids microwave diodes with different types of cathodes, shows that the efficiency and the frequency band of diodes with P~+ -N cathode are smaller than for the case of tungsten diodes.