Fabrication of sub-50 nm poly-Si/SiO/sub 2//Si narrow wires using electron beam lithography and CF/sub 4//Q/sub 2/ reactive ion etching

摘要

Poly-Si/SiO/sub 2//Si narrow wires with widths of less than 50 nm were fabricated using electron beam lithography and CF/sub 4/+10% O/sub 2/ reactive ion etching techniques. The extraction of optimum processing parameters for obtaining wires with nearly perpendicular sidewalls is reported.