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机译:具有分布式布拉格反射器和掩埋异质结构的表面发射激光二极管
Electrotech. Lab., Tsukuba, Japan;
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor junctions; sputter etching; 2*2 array; 28 mA; Al 0.1Ga 0.9As-Al 0.7Ga 0.3As multilayer; BH; DBR; LPE; MOCVD; RIBE; SELD; buried heterostructure; current blocking layers; distributed Bragg reflector; metalorganic chemical vapour deposition; reactive ion beam etching; spectral width; surface-emitting laser diode; threshold current;
机译:由于埋入异质结构分布的布拉格反射器激光器的退化导致激光波长变化
机译:埋入异质结构(BH)分布式布拉格反射器(DBR)激光器中有源区和无源区的退化行为
机译:具有周期性掺杂的分布式布拉格反射器的垂直腔面发射激光二极管中的阈值电流密度非常低
机译:在掩埋异质结构分布式布拉格反射器激光器的降解过程中激光波长变化
机译:砷化镓-砷化铝镓分布的反馈和分布的Bragg反射器激光
机译:高功率分布式布拉格反射器量子级联激光器中的异常模式转变
机译:采用平面埋地异形(PBH)对接耦合(BT)采样光栅(SG)分布式布拉格反射器(DBR)激光二极管(LD)的设计和制造