Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors

摘要

A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm/sup 2/ is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.