Accurate measurement technique for base transit time in heterojunction bipolar transistors

摘要

The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0*10/sup 19/ cm/sup -3/ of AlGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the Al/sub x/Ga/sub 1-x/As/GaAs composition graded base HBT was also measured using this technique.