Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

Hamada H.; Tominaga K.

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Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

机译：具有多量子势垒的610 nm波段AlGaInP应变多量子阱激光二极管的室温CW操作

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摘要

610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using

机译：具有多量子势垒的610 nm波段AlGaInP压缩应变多量子阱激光二极管已成功通过MOCVD使用以下方法制造

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来源
《Electronics Letters》 |1992年第19期|P.1834-1836|共3页
作者
Hamada H.; Tominaga K.;
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作者单位

Sanyo Electric Co. Ltd., Osaka, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 25 degC; 610 nm; 615 nm; AlGaInP; CW operation; GaAs; MOCVD; compressively strained MQW; laser diodes; multiquantum barrier; multiquantum well; room temperature operation; semiconductor lasers;

机译：III-V半导体;铝化合物;镓化合物;铟化合物;激光跃迁;半导体结激光器;气相外延生长;25°C;610 nm;615 nm;AlGaInP;CW操作;GaAs;MOCVD;压缩应变MQW;激光二极管;多量子势垒;多量子阱;室温操作;半导体激光器;

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专利

1. High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier [J] . Shono M., Honda S. Electronics Letters . 1993,第11期

机译：具有多量子势垒的630 nm波段拉伸应变多量子阱AlGaInP激光二极管的大功率工作
2. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates [J] . Hamada H., Hiroyama R. IEEE Journal of Quantum Electronics . 1993,第6期

机译：AlGaInP应变多量子阱可见激光二极管（λ/ sub L />或= 630 nm波段），在取向错误的衬底上生长有多量子势垒
3. Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on [J] . Yoshida I., Katsuyama T. Electronics Letters . 1992,第7期

机译：AlGaInP应变多量子阱激光器室温生长在632.7 nm的连续波下
4. High-performance 630-nm Band AlGaInP Strained Multiple Quantum Well Laser Diodes With A Multiquantum Barrier [C] . Hamada, H., Shono, . 1993

机译：具有多量子势垒的高性能630 nm波段AlGaInP应变多量子阱激光二极管
5. Properties of highly strained low dimensional active regions in diode lasers. [D] . Kim, Nam-Heon. 2006

机译：二极管激光器中高应变低维有源区的特性。
6. Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate [O] . Changda Zheng, Li Wang, Chunlan Mo, 2013

机译：等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
7. Subpicosecond (320 fs) pulses from CW passively mode-locked external cavity two-section multiquantum well lasers [O] . Schrans T., Salvatore R. A., Sanders S., 1992

机译：来自CW被动锁模外腔两段式多量子阱激光器的亚皮秒（320 fs）脉冲
8. High Speed, Strained Layer, Multiquantum Well, GaInAsP and GaAs Lasers andHeterostructures [R] . Bowers, J., Coldren, L., Robinson, G. Y., 1993

机译：高速，应变层，多量子阱，GaInasp和Gaas激光器和异质结构

Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

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