Enhancement and depletion-mode AlGaAs-In/sub 0.15/Ga/sub 0.85/As HEMTs fabricated by selective ion implantation

摘要

Enhancement- and depletion-mode AlGaAs/In/sub 0.15/Ga/sub 0.85/As HEMTs were fabricated on the same wafer by the selective ion implantation technique. This implantation results in extra carriers in the area of D-HEMTs, and therefore E- and D-HEMTs can be realised simultaneously after a single gate lithography step. As compared with the conventional approach, this selective ion implantation provides a convenient method for implementing E/D-mode logic circuits for high-speed and low-power applications.