Low threshold compressively strained InGaAs/lnGaAsP quantum well distributed feedback laser at 1.95 /spl mu/m

摘要

The lowest threshold operation of a strained InGaAs/InGaAsP quantum well distributed feedback laser is demonstrated at 1.95 /spl mu/m, fabricated by low pressure metal organic chemical vapour deposition. The threshold current was 4 mA at 10/spl deg/C. Single-mode operation was observed over the range 10-40/spl deg/C. A maximum output power of 7.2 mW was obtained, in addition to an external differential quantum efficiency of 15.9%, a characteristic temperature of 34 K and a side mode suppression ratio of 33.7 dB.