Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (/spl lambda/=1020 nm) ridge waveguide laser diodes

Beister G.; Bugge F.

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Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (/spl lambda/=1020 nm) ridge waveguide laser diodes

机译：InGaAs / AlGaAs（/ spl lambda / = 1020 nm）脊形波导激光二极管具有350 mW的单模发射和高可靠性

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3.35 mm long InGaAs-GaAs-AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with ZnSe-Al/sub 2/O/sub 3/. Remarkable facet stability was obtained, confirmed during aging at 40/spl deg/C and 300 mW emission power, or at 70/spl deg/C and 250 mW.

机译：在1020 nm处发射的3.35 mm长的InGaAs-GaAs-AlGaAs脊形波导激光器显示出高达350 mW的单模发射。通过扩大近场发射并使用ZnSe-Al / sub 2 / O / sub 3 /保护小平面。在40 / spl deg / C和300 mW的发射功率或70 / spl deg / C和250 mW的老化过程中获得了显着的刻面稳定性。

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《Electronics Letters》 |1998年第8期|P.778-779|共2页
作者
Beister G.; Bugge F.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Stable operation of InGaAs/InGaP/AlGaAs (/spl lambda/=1020 nm) laser diodes [J] . Erbert G., Beister G. Electronics Letters . 1997,第9期

机译：InGaAs / InGaP / AlGaAs（/ spl lambda / = 1020 nm）激光二极管的稳定运行
2. 350 mW reliable operation in fundamental transverse-mode InGaAs (/spl lambda/=1.05 /spl mu/m)/ GaAsP strain-compensated laser diodes [J] . Akinaga F., Kuniyasu T., Matsumoto K., Electronics Letters . 2003,第1期

机译：在基本横模InGaAs（/ spl lambda / = 1.05 / spl mu / m）/ GaAsP应变补偿激光二极管中可可靠运行350 mW
3. Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 >/spl lambda/>850 nm [J] . Bour D.P., Treat D.W. IEEE Photonics Technology Letters . 1994,第11期

机译：拉伸应变的AlGaAsP和InGaAsP-（AlGa）/ sub 0.5 / In / sub 0.5 / P量子阱激光二极管，用于650> / splλ850 nm波长范围内的TM模式发射
4. 20 W Peak single-Transverse-mode output power from 100-/spl um/m aperture-broadened waveguide GRINSCH QW GaAs/AlGaAs(/spl lambda/=0.81/spl um/m)and SCHDQW InGaAs/InGaAsP(/spl lambda/=0.97/spl um/m laser diodes [C] . Garbuzov, D., Morris, . 2001

机译：来自100- / spl um / m孔径扩展波导GRINSCH QW GaAs / AlGaAs（/ spl lambda / = 0.81 / spl um / m）和SCHDQW InGaAs / InGaAsP（/ spl lambda / = 0.97 / spl um / m激光二极管
5. High-power indium gallium arsenic phosphide-active diode lasers at lambda = 808 nm. [D] . Wade, Jerome Kent. 2004

机译：λ= 808 nm的高功率磷化铟镓砷有源二极管激光器。
6. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers [O] . Q Cao, SF Yoon, CY Liu, 2007

机译：窄脊波导高功率单模1.3μmInAs / InGaAs十层量子点激光器
7. CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode [O] . Chapman P. F., Hunsperger R. G., Forouhar S., 1995

机译：InGaAs-GaAs-AlGaAs横向耦合分布反馈（LC-DFB）脊形激光二极管的CW性能
8. Uniform Linear Arrays of Strained-Layer InGaAs-AlGaAs Quantum-Well Ridge-Waveguide Diode Lasers Fabricated by ECR-IBAE [R] . Woodhouse, J. D., Wang, C. A., Donnelly, J. P., 1994

机译：ECR-IBaE制备的应变层InGaas-alGaas量子阱脊波导二极管激光器的均匀线性阵列

Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (/spl lambda/=1020 nm) ridge waveguide laser diodes

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