Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 >/spl lambda/>850 nm

摘要

TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)/sub 0.5/In/sub 0.5/P-based laser diodes. These structures contain tensile-strained AlGaAsP or InGaAsP quantum well active regions, which are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension of the wavelength range available from typical GaInP-(AlGa)/sub 0.5/In/sub 0.5/P lasers, where the requirement for biaxial tension limits the TM-mode wavelengths to less than 650 nm. In addition, compared to AlGaAs confining structures, the high-bandgap (AlGa)/sub 0.5/In/sub 0.5/P confinement structure used here makes AlGaAs(P) active regions feasible at shorter wavelengths, with good performance maintained for 670>/spl lambda/>700 mn. Likewise, the wavelength range 700>/spl lambda/>750 nm, where AlGaAs laser characteristics are diminished, becomes accessible using these materials.