Laser-Diode Bars Based on AlGaAsP/GaAs Heterostructures Emitting at a Wavelength of 850 nm

摘要

Two types of laser heterostructures, i.e., those without internal mechanical stress compensation, with AlGaAs-alloy emitter and waveguide layers (type 1), and laser heterostructures with stress compensation, with AlGaAsP emitter and waveguide layers (type 2) are grown by metal-organic chemical vapor deposition (MOCVD). Laser-diode bars 5 mm wide with a fill factor of 24%, emitting at a wavelength of 850 nm are fabricated. Their power parameters in the continuous-wave (cw) and pulsed lasing modes are studied. It is shown that type-2 laser diode bars exhibit better linearity of the light-current characteristics in the cw and pulsed lasing modes in comparison with laser diode bars based on the type-1 structure.