Single photon avalanche photodetector with integrated quenching fabricated in TSMC 0.18 μm 1.8 V CMOS process

摘要

The design and testing of a single photon avalanche detector with integrated quenching circuit fabricated in the TSMC 0.18 μm CMOS technology are reported. A 78 μm~2 device exhibits an average dark count rate of 100 counts/s without cooling. Photon detection probability of approximately 14% is measured at 670 nm.