Highly linear and low noise differential bipolar MOSFET down-converter in CMOS process

摘要

A highly linear, low noise differential down-converter employing a new linearisation technique derived from composite transistors, i.e. nMOSFET and vertical NPN BJT, is proposed and implemented in a 0.18 μm CMOS technology. It draws 1 mA from a 2.5 V supply voltage and has a voltage gain of 13 dB, a double-sideband noise figure of 9.5 dB, an I1P2 of more than 49 dBm, and an IIP3 of 6.5 dBm.