High-speed AlGaInAs/AlInAs multiple quantum well pin photodiodes

摘要

A new high-speed, waveguided InP-based AlGaInAs/AlInAs multiple quantum well pin photodiode, fabricated by molecular beam epitaxy, is reported. Detectors can be tuned over a range of wavelengths (over 160 nm) using enhanced electro-absorption due to the quantum-confined Stark effect. A response rise time of 40 ps is measured by the subpicosecond impulse response.