Dual n-channel MOSFET saves space

摘要

The CMRDM3590 dual n-channel enhancement-mode MOSFET is packaged in a space-saving SOT-963 surface mount case. This device has two isolated 20-V 160-mA MOSFETs allowing for alternative design considerations and maximum efficiency of board space. The maximum R_(DS(on)) of the device is 3.0 Ω at I_D of 100 mA and V_(GS) of 4.5 V.