600-V MOSFET features 160-mΩ on-resistance

摘要

The AOTF27S60 600-V MOSFET is based on a proprietary aMOS (alpha-MOS) technology platform. It is the first product in this platform, and it suits high-voltage primary-side applications. At 160 mΩ max, this device reduces R_(DS(on)) by a factor of 3.5 compared to its planar 600-V MOSFETs. The alpha-MOS MOSFET features a 3.64 Ω-nC gate charge figure of merit (FoM) that improves on its planar-type MOSFET's FoM by a factor of 5.7.