首页> 外国专利> METHOD AND APPARATUS FOR MEASURING ON-RESISTANCE OF POWER MOSFET AND POWER MOSFET

METHOD AND APPARATUS FOR MEASURING ON-RESISTANCE OF POWER MOSFET AND POWER MOSFET

机译:功率MOSFET的导通电阻的测量方法和装置

摘要

PROBLEM TO BE SOLVED: To measure a value of an on-resistance highly accurately while sharing a measurement terminal necessary for measuring the on-resistance of a power MOSFET.;SOLUTION: Two measurement terminals 12a and 12b are set to a power MOSFET 11, thereby sharing a terminal for measuring a current and for measuring a voltage. When the power MOSFET 11 is in an off-state, a voltage V1, V2 between a source and a drain when a current running in a forward direction to a parasitic diode 11a formed between the source and drain is 11, I2 is measured. Then, in an on-state of the power MOSFET 11, a voltage V between the source and drain when a drain current is I is measured. An on resistance value RON is obtained by calculations from these measurement results. The on-resistance value RON is measured highly accurately with influences of a contact resistance 13 being eliminated.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:要在共享测量功率MOSFET导通电阻所需的测量端子的同时,高精度地测量导通电阻值;解决方案:功率MOSFET 11上设置了两个测量端子12a和12b从而共享用于测量电流和用于测量电压的端子。当功率MOSFET 11处于截止状态时,当在正向流向形成在源极和漏极之间的寄生二极管11a的电流为11时,测量源极和漏极之间的电压V1,V2。然后,在功率MOSFET 11的导通状态下,测量当漏极电流为I时源极和漏极之间的电压V。由这些测量结果通过计算获得导通电阻值RON。通过消除接触电阻13的影响,可以高精度地测量导通电阻RON.COPYRIGHT:(C)2000,JPO

著录项

  • 公开/公告号JP2000171517A

    专利类型

  • 公开/公告日2000-06-23

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP19980346931

  • 发明设计人 ABE HIROBUMI;UEDA NOBUTADA;NASU TADASHI;

    申请日1998-12-07

  • 分类号G01R31/26;G01R27/02;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:31

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