Shielded-gate MOSFETs lower conduction losses

摘要

Regulatory bodies as well as end customers find themselves striving for higher efficiency in dc/dc power supplies. New designs require lower specific on-resistance while not sacrificing unclamped Inductive switching (UIS) capability or increasing switching losses. The shielded-gate MOSFET can provide the answer for designers of dc/dc power supplies in the 30 to 200-V range. R_(DS(on)) reductions of 50% or greater have been realized with improved switching performance leading to higher efficiencies and opening the door for higher-frequency operation.