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Gate drive method and apparatus for reducing losses in the switching of MOSFETs

机译:用于减少MOSFET的开关损耗的栅极驱动方法和装置

摘要

Usually, in power converters, the load on a MOSFET is inductive, and the current cannot change rapidly. The drain current is the upper limit of the Miller current, so that if the gate current is larger than the drain current, the gate capacitance will continue to discharge and there can be no Miller shelf. If a parallel capacitor is used with a MOSFET, once the drain voltage starts to rise, the load current divides, placing a new lower limit on the Miller current. To drive a MOSFET with a gate current that exceeds the drain current, the circuit impedances have to be very low, suggesting a new geometry and packaging arrangement for the MOSFET and gate drive. A compatible gate turn of circuit is also disclosed.
机译:通常,在功率转换器中,MOSFET的负载是电感性的,电流不能快速变化。漏极电流是米勒电流的上限,因此,如果栅极电流大于漏极电流,则栅极电容将继续放电,并且不会有米勒架子。如果将并联电容器与MOSFET一起使用,则一旦漏极电压开始上升,负载电流就会分流,从而对Miller电流设置新的下限。为了用超过漏极电流的栅极电流驱动MOSFET,电路阻抗必须非常低,这为MOSFET和栅极驱动器提出了一种新的几何形状和封装布置。还公开了一种兼容的门匝。

著录项

  • 公开/公告号US6992520B1

    专利类型

  • 公开/公告日2006-01-31

    原文格式PDF

  • 申请/专利权人 EDWARD HERBERT;

    申请/专利号US20040707774

  • 发明设计人 EDWARD HERBERT;

    申请日2004-01-12

  • 分类号H03K17/04;

  • 国家 US

  • 入库时间 2022-08-21 21:41:28

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