首页> 外国专利> Power MOSFET gate protection circuit for self synchronized rectifier, has MOSFETs with low voltage conduction thresholds that are controlled by their gate-source wiring

Power MOSFET gate protection circuit for self synchronized rectifier, has MOSFETs with low voltage conduction thresholds that are controlled by their gate-source wiring

机译:用于自同步整流器的功率MOSFET栅极保护电路,其MOSFET的低压传导阈值受其栅极-源极布线控制

摘要

The MOSFETs having low voltage conduction thresholds, are controlled by their gate-source wirings. The transistors have sources parallel to voltage dividers, and gates that are adapted to be respectively connected to gates and source of associated power MOSFETs. An Independent claim is included for self-synchronized rectifier.
机译:具有低电压传导阈值的MOSFET由其栅极-源极布线控制。晶体管具有与分压器平行的源极,以及适于分别连接到相关功率MOSFET的栅极和源极的栅极。自同步整流器包括独立索赔。

著录项

  • 公开/公告号FR2826522A1

    专利类型

  • 公开/公告日2002-12-27

    原文格式PDF

  • 申请/专利权人 ALCATEL;

    申请/专利号FR20010008336

  • 发明设计人 DIALLO ALMADIDI;CEUNEBROCK PATRICK;

    申请日2001-06-25

  • 分类号H02M1/08;H02M1/16;H02M7/217;

  • 国家 FR

  • 入库时间 2022-08-21 23:37:57

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号