首页> 外文期刊>Electronic Computers, IEEE Transactions on >Fluxlok????????A Nondestructive, Random-Access Electrically Alterable: High-Speed Memory Technique Using Standard Ferrite Memory Cores
【24h】

Fluxlok????????A Nondestructive, Random-Access Electrically Alterable: High-Speed Memory Technique Using Standard Ferrite Memory Cores

机译:Fluxlok-非破坏性,随机存取的电气可变:使用标准铁氧体存储内核的高速存储技术

获取原文
获取原文并翻译 | 示例

摘要

The Fluxlok memory technique uses the principle of cross-field magnetization to achieve the nondestructive sensing of the information state of standard, readily available, ferrite memory cores in a simply wired memory plane. Bipolar output (ONE and ZERO) signals are obtained at the rate of rise of the READ pulse. The signals are unaffected by test temperatures of from ????????65???????°C to +100???????°C. Coincident current WRITE operation or an inherent orthogonal field WRITE may be used. A 2-mc 64-word Fluxlok memory test vehicle is described.
机译:Fluxlok存储器技术利用跨场磁化原理,在简单的有线存储平面中实现了标准,易于获得的铁氧体存储磁芯的信息状态的无损检测。以READ脉冲的上升速率获得双极输出(ONE和ZERO)信号。信号不受测试温度65°C至+ 100°C的影响。可以使用重合电流写操作或固有正交场写。描述了2 mc 64字Fluxlok内存测试工具。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号