A newly structured triple-well resonant tunneling diode (RTD) is proposed as a triple-valued logic device. The superiority of this new RTD for triple-valued logic application is demonstrated with numerical simulation based on the transfer matrix method. This new RTD exhibits significant double-negative differential resistance, and the two current peak voltages are independently controlled with well thicknesses. Comparing the numerical calculation and experimental data, it is shown that agreement between the calculation and experiment on the two current peak voltages is excellent.
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