On the use of Thornber's augmented drift-diffusion equation for modeling GaAs devices

摘要

This brief examines the usefulness of Thornber's augmented drift-diffusion equation (1982) for modeling submicrometer GaAs devices. A general methodology for assessing charge transport models is outlined, and a new method for calculating Thornber's augmenting transport coefficients is described. A Monte Carlo simulation of electron transport in GaAs is then used to perform calculations that permit an assessment of the utility of Thornber's equation. These results demonstrate significant problems in using Thornber's equation to model submicrometer GaAs devices.