Ultimate scaling limits for high-frequency GaAs MESFETs

摘要

The scaling relationships of GaAs MESFETs are investigated by examining the dimensions and material parameters of devices fabricated over the past 22 years (1966 to 1988). Scaling rules are suggested that will account for the collected data. Extrapolation of the extracted scaling rules to very small geometries along with consideration of basic physical principles, suggests ultimate scaling limits for millimeter-wave GaAs MESFETs.