High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

摘要

High-performance staggered a-Si:H and poly-Si thin-film transistors (TFTs) fabricated by XeCl excimer laser annealing of a-Si:H films are discussed. The field-effect mobility of poly-Si TFT is 102 cm/sup 2//V-s, and that of a-Si:H TFT is 0.23 cm/sup 2//V-s. Their drain current on/off ratios are over 10/sup 6/. Except for the crystallization, the fabrication process was the same for both of them. This process appears extremely promising for the integration of matrix elements and peripheral drivers in a single substrate.