Deep-level transient spectroscopy of Al/sub x/Ga/sub 1-x/As/GaAs using nondestructive acousto-electric voltage measurement

摘要

The amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in Al/sub x/Ga/sub 1-x/As/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, the DLTS method has several advantages. The technique is nondestructive and highly sensitive, and because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers.