The narrow-channel effect in MOSFET's with semi-recessed oxide structures

摘要

An analytical expression for the threshold voltage of a narrow-channel MOSFET with a semirecessed field isolation structure is obtained by solving the Laplace equation in the field oxide using a conformal transformation. The model also applies to nonrecessed and fully recessed structures. Both the conventional and inverse narrow-channel effects are observed with a variation of the backgate bias, dopant concentration, and fixed oxide charges. The model is in good agreement with existing models.