Low-threshold InGaAs/GaAs strained-layer surface emitting lasers with two 45 degrees angle etched total reflection mirrors

摘要

Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching.