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首页> 外文期刊>IEEE Transactions on Electron Devices >An overvoltage, self-protected thyristor with high breakover power endurance
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An overvoltage, self-protected thyristor with high breakover power endurance

机译:具有高击穿功率承受能力的过压自保护晶闸管

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摘要

A high-resistance region was built in between the pilot thyristor and auxiliary thyristor. The built-in resistance had the ability to transfer the breakover power to the resistance region. Power dissipation in the device could be controlled by varying the built-in resistance. Using the built-in resistance, the breakover power endurance of a thyristor with a 5.5-kV breakover voltage could be increased by more than twice that of a device with no built-in resistance. The built-in resistance also functioned as a ballast resistor to make current spreading uniform. The voltage of the resistance region did not change for the two junction temperatures studied, 23 degrees C and 100 degrees C.
机译:在可控硅和辅助可控硅之间建立了一个高阻区。内置电阻具有将突破能力转移到电阻区域的能力。可以通过改变内置电阻来控制设备中的功耗。使用内置电阻,具有5.5kV击穿电压的晶闸管的击穿功率耐力可以比没有内置电阻的器件增加两倍以上。内置电阻还用作镇流电阻,使电流扩散均匀。对于研究的两个结温,即23摄氏度和100摄氏度,电阻区域的电压没有变化。

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