An overvoltage self-protected thyristor with a structure to predict breakover voltage

摘要

A new concept for an overvoltage self-protected thyristor was theoretically analyzed and the thyristor manufactured. Its breakover operation is basically a combination of punchthrough and avalanche phenomena. Temperature dependence of the original structure in this thyristor is 5% from 20 to 125/spl deg/C. A second device which has a function to predict breakover voltage was also produced. The difference in temperature dependence of breakover voltage for both devices was investigated by an analytical model. Structures offering improved characteristics were proposed. The breakover voltage decrease of the developed structures at high temperature could be made equal to that of the original structure by a slight modification of the breakover region.