Demonstration of monolithic co-fabrication of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7- delta / and CMOS devices on the same sapphire substrate

摘要

Summary form only given. The authors report the first fabrication of active semiconductor and high-temperature superconducting (HTS) devices on the same substrate. CMOS transistors were fabricated on the same sapphire substrate as either YBCO flux-flow transistors (FFTs) or YBCO superconducting quantum interference devices (SQUIDs). All devices functioned as expected at 77 K without degradation, demonstrating that a compatible process has been found to monolithically integrate adjacent CMOS and HTS devices.